Keywords

Heavy ions, MOS Devices, MOSFETs, Power FETs, Power Semiconductor Devices, radiation hardening, radiation effects, Semiconductor devices, Semiconductor device modeling, Semiconductor device radiation effects

Abstract

NASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in space environments. Presently vertical double-diffused MOSFETs (VDMOS) are the most widely used power switching device for space power systems. It is proposed that a new lateral double-diffused MOSFET (LDMOS) designed at UCF can offer improvements in total dose and single event radiation hardness, switching performance, development and manufacturing costs, and total mass of power electronics systems. Availability of a hardened fast-switching power MOSFET will allow space-borne power electronics to approach the current level of terrestrial technology, thereby facilitating the use of more modern digital electronic systems in space. It is believed that the use of a p+/p-epi starting material for the LDMOS will offer better hardness against single-event burnout (SEB) and single-event gate rupture (SEGR) when compared to vertical devices fabricated on an n+/n-epi material. By placing a source contact on the bottom-side of the p+ substrate, much of the hole current generated by a heavy ion strike will flow away from the dielectric gate, thereby reducing electrical stress on the gate and decreasing the likelihood of SEGR. Similarly, the device is hardened against SEB by the redirection of hole current away from the base of the device's parasitic bipolar transistor. Total dose hardness is achieved by the use of a standard complementary metal-oxide semiconductor (CMOS) process that has shown proven hardness against total dose radiation effects.

Notes

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Graduation Date

2007

Semester

Fall

Advisor

Shen, John

Degree

Master of Science in Electrical Engineering (M.S.E.E.)

College

College of Engineering and Computer Science

Department

Electrical Engineering and Computer Science

Degree Program

Electrical Engineering

Format

application/pdf

Identifier

CFE0001966

URL

http://purl.fcla.edu/fcla/etd/CFE0001966

Language

English

Release Date

November 2007

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

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