Keywords

ion implantation, silicon, SIMS

Abstract

Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.

Notes

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Graduation Date

2007

Semester

Fall

Advisor

An, Linan

Degree

Master of Science (M.S.)

College

College of Engineering and Computer Science

Department

Mechanical, Materials and Aerospace Engineering;

Degree Program

Materials Science and Engineering

Format

application/pdf

Identifier

CFE0001909

URL

http://purl.fcla.edu/fcla/etd/CFE0001909

Language

English

Release Date

December 2007

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

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