ion implantation, silicon, SIMS
Ion implantation and the subsequent redistribution of manganese atoms in Czochralski Silicon (Cz-Si) and Floating Zone Silicon (Fz-Si) due to thermal annealing between 300 C and 1000 C is studied using Secondary Ion Mass Spectroscopy. The samples ion implanted at 340 C showed multiple peak formation above 900 C. This was not observed for the samples ion implanted at room temperature. Cz-Si and Fz-Si showed similar redistribution profiles.
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Master of Science (M.S.)
College of Engineering and Computer Science
Mechanical, Materials and Aerospace Engineering;
Materials Science and Engineering
Length of Campus-only Access
Masters Thesis (Open Access)
Shunmugavelu, Arun Kumar, "Redistribution Of Manganese Ion Implanted In Silicon" (2007). Electronic Theses and Dissertations. 3348.