Keywords

radio frequency; low noise amplifier; hot carrier effect

Abstract

This thesis work is mainly focused on studying RF performance degradation of a low noise amplifier (LNA) circuit due to hot carrier effect (HCE) in both the weak and strong inversion regions. Since the figures of merit for the RF circuit characterization are gain, noise figure, input, and output matching, the LNA RF performance drift is evaluated in a Cadence SpectreRF simulator subject to these features. This thesis presents hot carrier induced degradation results of an LNA to show that the HCE phenomenon is one of the serious reliability issues in the aggressively scaled RF CMOS design, especially for long-term operation of these devices. The predicted degradation from simulation results can be used design reliable CMOS RF circuits.

Notes

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Graduation Date

2006

Semester

Spring

Advisor

Yuan, Jiann-Shiun

Degree

Master of Science (M.S.)

College

College of Engineering and Computer Science

Department

Electrical and Computer Engineering

Degree Program

Electrical Engineering

Format

application/pdf

Identifier

CFE0000952

URL

http://purl.fcla.edu/fcla/etd/CFE0000952

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

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