Title

The Fabrication Of Metal-Oxide Semiconductor Transistors Using Cerium Dioxide As A Gate Oxide Material

Title - Alternative

J. Vac. Sci. Technol. B

Abstract

Cerium dioxide was employed as a gate insulator for an enhancement-type n-channel metal-oxide-semiconductor (MOS) transistor. Cerium was evaporated in a tungsten boat and immediately oxidized for oxide uniformity. The use of CeO2 as a gate oxide in MOS transistor yielded a low positive threshold voltage with negligible interface charge effects. This resulted in the transistor performing as an enhancement type device.

Publication Title

Journal of Vacuum Science & Technology B

Volume

9

Issue/Number

1

Publication Date

1-1-1991

Document Type

Note

Language

English

First Page

181

Last Page

183

WOS Identifier

WOS:A1991EZ16900028

ISSN

1071-1023

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