Effects Of Using The More Accurate Intrinsic Concentration On Bipolar-Transistor Modeling - Reply
Title - Alternative
J. Appl. Phys.
This reply addresses the issues raised by Rode and Rosenbaum regarding the bipolar junction transistor model developed in the subject paper [J. Appl. Phys. 68, 5911 (1990)]. The error associated with Eq. (4) in the subject paper is discussed and corrected, the value of the space-charge-region recombination time used is specified, and the results are recalculated. It is shown that the error in Eq. (4) does not alter notably the trends of the current gain calculated using the two different intrinsic concentrations.
Journal of Applied Physics
Liou, J J., "Effects Of Using The More Accurate Intrinsic Concentration On Bipolar-Transistor Modeling - Reply" (1991). Faculty Bibliography. 1402.