Title

Effects Of Using The More Accurate Intrinsic Concentration On Bipolar-Transistor Modeling - Reply

Authors

J J. Liou

Title - Alternative

J. Appl. Phys.

Abstract

This reply addresses the issues raised by Rode and Rosenbaum regarding the bipolar junction transistor model developed in the subject paper [J. Appl. Phys. 68, 5911 (1990)]. The error associated with Eq. (4) in the subject paper is discussed and corrected, the value of the space-charge-region recombination time used is specified, and the results are recalculated. It is shown that the error in Eq. (4) does not alter notably the trends of the current gain calculated using the two different intrinsic concentrations.

Publication Title

Journal of Applied Physics

Volume

70

Issue/Number

7

Publication Date

1-1-1991

Document Type

Note

Language

English

First Page

3975

Last Page

3976

WOS Identifier

WOS:A1991GJ67500095

ISSN

0021-8979

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