Laser-Induced Darkening In Semiconductor-Doped Glasses
Title - Alternative
J. Opt. Soc. Am. B-Opt. Phys.
We have performed experiments to characterize permanent laser-induced darkening in CdS(x)Se1-x semiconductor-doped glasses with picosecond pulses as a function of fluence, repetition rate, and pulse width. We find that the darkening occurs by means of a nonlinear process that exhibits an anomalous dependence on pulse width. Transmission spectra show that the induced darkening is uniform over the spectral range from the absorption edge out to 820-mu-m. Darkening in a number of different glasses is compared. On the basis of our results we propose a mechanism that involves photoassisted trapping of electrons from the semiconductor microcrystallites into states within the glass host material.
Journal of the Optical Society of America B-Optical Physics
Malhotra, J; Hagan, D J.; and Potter, B G., "Laser-Induced Darkening In Semiconductor-Doped Glasses" (1991). Faculty Bibliography. 1405.