Electrochemical Etching Of Silicon By Hydrazine
Title - Alternative
J. Electrochem. Soc.
Aqueous Koh; Anodic-Dissolution; Ethylenediamine-Pyrocatechol; Stop; Mechanism; Passivation; Dependence; Electrochemistry; Materials Science, Coatings & Films
The anodic dissolution and passivation of n- and p-type Si in different concentrations etching temperatures were studies. During etching, performed at 70 and 90-degrees-C, it was observed that the current-potential characteristics for both n- and p-type Si showed a current reduction after reaching a peak value. A linear I-V relation was observed for the room temperature etching. A mechanism, which accounts for the solution as under different biasing conditions, is proposed to give a qualitative explanation of the different I-V behaviors for n- and p-type semiconductors.
Journal of the Electrochemical Society
Sundaram, K. B. and Chang, H. W., "Electrochemical Etching Of Silicon By Hydrazine" (1993). Faculty Bibliography. 1506.