2-Dimensional Analysis Of Ion-Implanted, Bipolar-Compatible, Long-Channel And Short-Channel Junction Field-Effect Transistors
Title - Alternative
IEEE Trans. Electron Devices
Mesfets; Engineering, Electrical & Electronic; Physics, Applied
A two-dimensional analysis of ion-implanted, bipolar-compatible, long- and short-channel JFET's is presented. Aided by the two-dimensional device simulator PISCES, we study the steady-state characteristics of the JFET's. Besides analyzing the linear and saturation regions, our simulation gives insight about the transition region between the linear and saturation regions, the details of which conventional theory fails to provide. In contrast to the long-channel JFET, short-channel JFET behavior deviates considerably from the conventional theory developed based on the gradual channel approximation. This deviation occurs because the x-direction electric field in the channel of the short-channel JFET is much stronger than that in the long-channel JFET, thus invalidating the approach of separating the x and y components used in the long-channel device. Our study shows that the short-channel JFET has several properties that were not previously emphasized: a) no pinch-off in saturation operation; b) free-carrier drift velocity saturates in saturation operation; and c) power-law I-V characteristics in the cutoff region. The details regarding the shape of the conducting channel, the electric field vectors, the current vectors, and the current-voltage characteristics are provided.
Ieee Transactions on Electron Devices
Wong, W. S. W. and Liou, J. J., "2-Dimensional Analysis Of Ion-Implanted, Bipolar-Compatible, Long-Channel And Short-Channel Junction Field-Effect Transistors" (1992). Faculty Bibliography. 1549.