Modulating The Bipolar Junction Transistor Subjected To Neutron-Irradiation For Integrated-Circuit Simulation
Title - Alternative
IEEE Trans. Electron Devices
Space; Engineering, Electrical & Electronic; Physics, Applied
Bipolar junction transistors (BJT's) are susceptible to particle bombardment in radiative environment. This paper presents a model which is capable of predicting BJT performance subjected to neutron irradiation and is suitable for SPICE circuit simulation. It is shown that neutron irradiation affects slightly the emitter-base space-charge region capacitance but strongly the forward-active dc current gain. Results calculated from the present model compare favorably with measured dependencies available in the literature. The present model is also implemented into SPICE, and the performance of a BJT differential amplifier is simulated.
Ieee Transactions on Electron Devices
Liou, J. J.; Yuan, J. S.; and Shakouri, H., "Modulating The Bipolar Junction Transistor Subjected To Neutron-Irradiation For Integrated-Circuit Simulation" (1992). Faculty Bibliography. 1551.