Title

Modulating The Bipolar Junction Transistor Subjected To Neutron-Irradiation For Integrated-Circuit Simulation

Title - Alternative

IEEE Trans. Electron Devices

Keywords

Space; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Bipolar junction transistors (BJT's) are susceptible to particle bombardment in radiative environment. This paper presents a model which is capable of predicting BJT performance subjected to neutron irradiation and is suitable for SPICE circuit simulation. It is shown that neutron irradiation affects slightly the emitter-base space-charge region capacitance but strongly the forward-active dc current gain. Results calculated from the present model compare favorably with measured dependencies available in the literature. The present model is also implemented into SPICE, and the performance of a BJT differential amplifier is simulated.

Publication Title

Ieee Transactions on Electron Devices

Volume

39

Issue/Number

3

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

593

Last Page

597

WOS Identifier

WOS:A1992HE79900020

ISSN

0018-9383

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