Quantum Corrections To The Electronic Transport-Properties Of The Free-Electron Metallic-Glass Mgzn
Title - Alternative
J. Phys.-Condes. Matter
Spin-Orbit Interaction; Weak Localization; Conduction Electrons; Disordered-Systems; Magnetic-Field; Zn Alloys; Magnetoresistance; Transition; Films; Superconductors; Physics, Condensed Matter
The conductivity and the Hall effect of three-dimensional MgxZn100-x glasses are studied as a function of magnetic field (0 less-than-or-equal-to B less-than-or-equal-to 6 Tesla), temperature (1.5 < T < 100 K) and concentration (x = 67, 72 and 77). The magnetoconductivity DELTA-sigma(T, B) provides evidence for quantum corrections to the Boltzmann equation. It is in quantitative agreement with perturbation theories, when contributions due to quantum interference, electron-electron interaction and superconducting fluctuations are taken into account. The spin-orbit scattering field increases with the Zn concentration from 0.086 Tesla (Mg77Zn23) to 0.13 Tesla (Mg67Zn33). The temperature and concentration dependence of the Hall coefficient are also consistent with the nearly-free-electron model when quantum corrections are included.
Journal of Physics-Condensed Matter
Schulte, A.; Lobl, P.; Kuss, F.; and Luscher, E., "Quantum Corrections To The Electronic Transport-Properties Of The Free-Electron Metallic-Glass Mgzn" (1992). Faculty Bibliography. 1578.