Title

Simple-Model For The Saturation Voltage And Current Of Submicron Mosfets

Authors

J. J. Liou

Title - Alternative

Int. J. Electron.

Keywords

Engineering, Electrical & Electronic

Abstract

A simple but reasonably accurate model is presented for the saturation voltage and current of submicron MOSFETs in strong inversion. Relevant device physics such as the effects of short channel, narrow channel, and the voltage drop along the channel caused by the drain voltage are accounted for in a first-order manner. The conventional model is also derived from the present model by employing several approximations. It is shown that the present model compares more favourably with PISCES device simulation results and that the conventional model can overestimate the saturation I-V characteristics by about 30% for a typical submicron MOSFET. We further suggest that the error caused by the conventional model is smaller for a MOSFET having a shorter channel, a wider channel, or/and a lower impurity doping concentration.

Publication Title

International Journal of Electronics

Volume

73

Issue/Number

3

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

560

Last Page

567

WOS Identifier

WOS:A1992JQ95300010

ISSN

0020-7217

Share

COinS