Title

Improved Bipolar Model-Equations For Small-Signal Circuit Simulation

Title - Alternative

Int. J. Electron.

Keywords

High-Current Densities; Dimensional Model; Transistors; Formulation; Engineering, Electrical & Electronic

Abstract

The silicon bipolar model equations have been examined and implemented in small-signal circuit simulation. The modified model equations account for the physical effects of emitter current crowding, emitter-base sidewall injection, base-width modulation, base-conductivity modulation, base pushout, and current-dependent series resistance for all levels of injection. SPICE simulation employing the present model is compared with the small-signal PISCES device simulation and good agreement is obtained.

Publication Title

International Journal of Electronics

Volume

72

Issue/Number

4

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

619

Last Page

630

WOS Identifier

WOS:A1992HR74800009

ISSN

0020-7217

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