Title

Modeling The Channel-Length Modulation Coefficient For Junction Field-Effect Transistors

Title - Alternative

Int. J. Electron.

Keywords

Circuit; Engineering, Electrical & Electronic

Abstract

The saturation current-voltage characteristics of a junction field-effect transistor (JFET) are influenced by the effective conducting channel length of the device. The effective channel length is modulated by the gate voltage and the drain voltage due to the variation of the thicknesses of the depletion layers associated with the top- and bottom-gate of the JFET. For a given gate voltage, the effective channel length will shrink if the drain voltage is increased, a mechanism normally described by the channel-length modulation coefficient lambda. This paper develops a model for calculating lambda, when combined with a recently developed JFET static model, this lambda model can be used to predict the saturation behaviour of JFETs. Experimental data are included in support of the model.

Publication Title

International Journal of Electronics

Volume

72

Issue/Number

4

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

533

Last Page

540

WOS Identifier

WOS:A1992HR74800002

ISSN

0020-7217

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