Title

Current Voltage Characteristics Of Bipolar-Transistors Including Quasi-Saturation, Finite Collector Lifetime, And High-Low Junction Effects

Authors

J. J. Liou

Title - Alternative

Int. J. Electron.

Keywords

Model; Engineering, Electrical & Electronic

Abstract

A physics-based and compact model is developed to predict the bipolar transistor DC characteristics covering all saturation, quasi-saturation, and active operations. The present model differs from the existing models in that the present model employs a regional approach rather than the charge-control approach used previously and that the present model requires only the physical parameters, such as device make-up, whereas the previous models often require parameters extracted from measurements. Device physics relevant to the base-collector junction, like current-induced base widening and conductivity modulation and electron-hole recombination in the quasi-neutral collector layer, are accounted for in the analysis. We show that the current voltage characteristics predicted by the present model compare favourably with that obtained from measurements and simulations reported in the literature.

Publication Title

International Journal of Electronics

Volume

72

Issue/Number

1

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

89

Last Page

98

WOS Identifier

WOS:A1992GY33100009

ISSN

0020-7217

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