Title

A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas/Gaas Multi-Finger Hbts

Title - Alternative

Solid-State Electron.

Keywords

Heterojunction Bipolar-Transistors; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A numerical analysis is presented to investigate different base and collector structures on the d.c. and a.c. performance of AlGaAs/GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared. The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms governing these changes are also discussed in detail.

Publication Title

Solid-State Electronics

Volume

38

Issue/Number

7

Publication Date

1-1-1995

Document Type

Article

Language

English

First Page

1339

Last Page

1346

WOS Identifier

WOS:A1995RD57900010

ISSN

0038-1101

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