Title

Modeling Si/Si1-Xgex Heterojunction Bipolar-Transistors

Authors

J. S. Yuan

Title - Alternative

Solid-State Electron.

Keywords

Current Gain; Hbts; Si1-Xgex; Circuits; Silicon; Delay; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

Modeling Si/Si1-xGex/Si heterojunction bipolar transistors (HBTs) has been examined. The model equations account for valence- and conduction-band discontinuities, heavy doping effects and high collector current effects. Bias-dependent emitter resistance and heterojunction capacitances are also included. Comparison between the model prediction and the experimental data is used to demonstrate the model utility and accuracy. Good agreement between the model prediction and measurement has been obtained. The model is useful for predicting the gate delay of emitter-coupled logic at different temperatures.

Publication Title

Solid-State Electronics

Volume

35

Issue/Number

7

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

921

Last Page

926

WOS Identifier

WOS:A1992JB92400006

ISSN

0038-1101

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