Title

Numerical-Simulation Of Current-Voltage Characteristics Of Silicon Photoconductive Circuit Elements

Title - Alternative

Int. J. Numer. Model.-Electron. Netw. Device Fields

Keywords

Engineering, Electrical & Electronic; Mathematics, Interdisciplinary; Applications

Abstract

Photoconductive circuit elements (PCEs) are suitable for switching applications: they can be turned on and off rapidly, they can conduct a large current in the 'on' state when applying a laser or other optical excitation containing high energy photons exceeding the silicon band gap energy, they have a large resistance in the 'off' state when the light is off, and they can be fabricated using a simple process. We report the steady-state characteristics of PCEs simulated from a two-dimensional simulator called PISCES-2B. The effects of the conducting channel length, the resistivity of the intrinsic silicon, and the type of contact region on the performance of the PCE will be investigated and discussed. Based on the simulation results, optimal PCE device make-ups will also be suggested.

Publication Title

International Journal of Numerical Modelling-Electronic Networks Devices and Fields

Volume

6

Issue/Number

3

Publication Date

1-1-1993

Document Type

Article

Language

English

First Page

221

Last Page

231

WOS Identifier

WOS:A1993MG74900005

ISSN

0894-3370

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