Title

Deposition Parameters Studies Of Silicon-Nitride Films Prepared By Plasma-Enhanced Cvd Process Using Silane Ammonia

Title - Alternative

J. Mater. Sci.-Mater. Electron.

Keywords

Dioxide; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using silane-ammonia as the reactant gas mixture. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, r.f. power, time of deposition and electrode spacing, on the deposition and etch rates were investigated and experimental results are presented.

Publication Title

Journal of Materials Science-Materials in Electronics

Volume

4

Issue/Number

4

Publication Date

1-1-1993

Document Type

Article

Language

English

First Page

283

Last Page

287

WOS Identifier

WOS:A1993ML56300007

ISSN

0957-4522

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