Title

Statistical And Numerical-Method For Mosfet Integrated-Circuit Sensitivity Simulation Using Spice

Keywords

METAL-OXIDE-SEMICONDUCTOR STRUCTURES; SIMULATION; INTEGRATED CIRCUITS; SENSITIVITY; Engineering, Electrical & Electronic

Abstract

Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit are most influential on its performance and how variations of the device and process parameters affect the circuit output responses. The paper presents a systematic approach for analysis of metal-oxide-semiconductor field effect transistor (MOSFET) integrated circuit DC performance as a function of channel length and width variations. The method, which involves an algorithm based on the Tellegen theorem and a database that contains statistical information on MOSFET process parameters, is implemented in the widely used SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier is included to illustrate the usefulness of the method.

Publication Title

Iee Proceedings-G Circuits Devices and Systems

Volume

138

Issue/Number

1

Publication Date

1-1-1991

Document Type

Article

Language

English

First Page

77

Last Page

82

WOS Identifier

WOS:A1991EV25000015

ISSN

0956-3768

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