Statistical And Numerical-Method For Mosfet Integrated-Circuit Sensitivity Simulation Using Spice
METAL-OXIDE-SEMICONDUCTOR STRUCTURES; SIMULATION; INTEGRATED CIRCUITS; SENSITIVITY; Engineering, Electrical & Electronic
Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit are most influential on its performance and how variations of the device and process parameters affect the circuit output responses. The paper presents a systematic approach for analysis of metal-oxide-semiconductor field effect transistor (MOSFET) integrated circuit DC performance as a function of channel length and width variations. The method, which involves an algorithm based on the Tellegen theorem and a database that contains statistical information on MOSFET process parameters, is implemented in the widely used SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier is included to illustrate the usefulness of the method.
Iee Proceedings-G Circuits Devices and Systems
Wong, W W.; Winton, R S.; and Liou, J J., "Statistical And Numerical-Method For Mosfet Integrated-Circuit Sensitivity Simulation Using Spice" (1991). Faculty Bibliography. 1978.