Cayalo4 - New Low-Loss Substrate Material For Epitaxial-Growth Of Superconducting Thin-Films
Title - Alternative
Jpn. J. Appl. Phys. Part 2 - Lett.
CAYAIO4; YBA2CU3O7-DELTA; TL2BA2CACU2O8; LOW-LOSS SUBSTRATE; LASER; ABLATION; MICROWAVE PROPERTY; INTERDIFFUSION; MICROWAVE; Physics, Applied
A twin-free substrate material, CaYAlO4, was synthesized and used for the epitaxial growth of single crystal YBa2CU3O7-delta and Tl2Ba2CaCU2O8 thin films for the first time. The lattice parameters of ttus new substrate are a = b = 3.648 angstrom and c= 11.89 angstrom. The dielectric properties, similar to those of LaAlO3, are 20(dielectric constant) and 4 x 10(-5) (loss tangent) at 5 GHz and 77 K. Initial attempts at film growth on this substrate indicate degradation of both superconducting and microwave properties possibly due to interdiffusion.
Japanese Journal of Applied Physics Part 2-Letters
Young, K H. and Chai, B H. T., "Cayalo4 - New Low-Loss Substrate Material For Epitaxial-Growth Of Superconducting Thin-Films" (1991). Faculty Bibliography. 1980.