Title

2-Dimensional Lateral Bipolar-Transistor Model For Circuit Simulation

Authors

J S. Yuan

Title - Alternative

Int. J. Electron.

Keywords

Engineering, Electrical & Electronic

Abstract

A lateral bipolar transistor circuit model including two-dimensional current characteristics has been developed. The model accounts for the physical effects of base width modulation, base conductivity modulation, hole-electron plasma-induced bandgap narrowing, and current-dependent base resistance. SPICE simulation employing the present model shows good agreement with computer experimental results.

Publication Title

International Journal of Electronics

Volume

70

Issue/Number

6

Publication Date

1-1-1991

Document Type

Article

Language

English

First Page

1041

Last Page

1048

WOS Identifier

WOS:A1991FV55100003

ISSN

0020-7217

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