Optimal Cmos Interconnect Width Design In Electromigration-Free Material
Title - Alternative
Int. J. Electron.
Engineering, Electrical & Electronic
An optimal width design for an electromigration-free interconnect in CMOS technology has been developed. The interconnect width is minimized to account for interconnect capacitance and electromigration effects. The analytical solution provides insights into interconnect and circuit sensitivities. Optimization of the interconnect width for a given maximum current density is presented. This technique offers a fast turn-around design time compared with iterative circuit simulations.
International Journal of Electronics
Yuan, J S., "Optimal Cmos Interconnect Width Design In Electromigration-Free Material" (1991). Faculty Bibliography. 1983.