Title

High-Performance P-N-P Heterojunction Bipolar-Transistor Design

Authors

J S. Yuan

Title - Alternative

Solid-State Electron.

Keywords

VELOCITY OVERSHOOT; CAPACITANCE; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

The performance of P-n-p AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for analog and digital circuit applications is compared to that of N-p-n HBTs. The theoretical analysis shows that the P-n-p HBTs are comparable with N-p-n HBTs in high-speed digital operation, while the N-p-n HBTs exhibit higher cut-off frequency in microwave and millimeter-wave operation. Analytical equations and SPICE circuit simulation are used in support of the comparison between the P-n-p and N-p-n HBTs. Optimization of device doping profile design for P-n-p and N-p-n heterojunction bipolar transistors in analog and digital circuits are presented.

Publication Title

Solid-State Electronics

Volume

34

Issue/Number

12

Publication Date

1-1-1991

Document Type

Article

Language

English

First Page

1347

Last Page

1352

WOS Identifier

WOS:A1991GU72900006

ISSN

0038-1101

Share

COinS