Temperature And Impact Ionization Effects On Ft Of Advanced Bipolar-Transistors
Title - Alternative
J. Appl. Phys.
CAPACITANCE; BASE; TECHNOLOGY; MODEL; Physics, Applied
Modeling the cutoff frequency (f(T)) of the advanced bipolar transistors at avalanche breakdown has been developed. The analytical equations developed account for temperature and impact ionization effects on f(T) and high-current effects at the collector-base junction. Process sensitivity of the collector charging time at the avalanche breakdown regime has been examined. The experimental data reported in the literature are compared in support of the model. Good agreement between the model prediction and measurement is obtained.
Journal of Applied Physics
Yuan, J S.; Yeh, C S.; and Gadepally, B, "Temperature And Impact Ionization Effects On Ft Of Advanced Bipolar-Transistors" (1991). Faculty Bibliography. 1988.