Title

Temperature And Impact Ionization Effects On Ft Of Advanced Bipolar-Transistors

Title - Alternative

J. Appl. Phys.

Keywords

CAPACITANCE; BASE; TECHNOLOGY; MODEL; Physics, Applied

Abstract

Modeling the cutoff frequency (f(T)) of the advanced bipolar transistors at avalanche breakdown has been developed. The analytical equations developed account for temperature and impact ionization effects on f(T) and high-current effects at the collector-base junction. Process sensitivity of the collector charging time at the avalanche breakdown regime has been examined. The experimental data reported in the literature are compared in support of the model. Good agreement between the model prediction and measurement is obtained.

Publication Title

Journal of Applied Physics

Volume

70

Issue/Number

4

Publication Date

1-1-1991

Document Type

Article

Language

English

First Page

2402

Last Page

2407

WOS Identifier

WOS:A1991GC09800077

ISSN

0021-8979

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