Title

Hyperspherical Formulation Of Impurity-Bound Excitons In Semiconductors

Title - Alternative

Phys. Rev. B

Keywords

NONLINEAR OPTICAL-PROPERTIES; ADIABATIC APPROXIMATION; STATES; Physics, Condensed Matter

Abstract

A hyperspherical formalism is shown to be an appropriate approach for the investigation of the three-particle complex corresponding to an exciton bound to a Coulomb center in a semiconductor. The ground- and excited-state potential curves and binding energies are calculated as a function of the mass ratio of the hole and electron, and the concept of a critical mass is discussed. The results that we have obtained are in very good agreement with variational calculations for several semiconductor materials.

Publication Title

Physical Review B

Volume

46

Issue/Number

4

Publication Date

1-1-1992

Document Type

Article

Language

English

First Page

2101

Last Page

2108

WOS Identifier

WOS:A1992JE92800021

ISSN

1098-0121

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