Hyperspherical Formulation Of Impurity-Bound Excitons In Semiconductors
Title - Alternative
Phys. Rev. B
NONLINEAR OPTICAL-PROPERTIES; ADIABATIC APPROXIMATION; STATES; Physics, Condensed Matter
A hyperspherical formalism is shown to be an appropriate approach for the investigation of the three-particle complex corresponding to an exciton bound to a Coulomb center in a semiconductor. The ground- and excited-state potential curves and binding energies are calculated as a function of the mass ratio of the hole and electron, and the concept of a critical mass is discussed. The results that we have obtained are in very good agreement with variational calculations for several semiconductor materials.
Physical Review B
Day, A E.; Hornos, J E.; Coelho, H T.; and Caldwell, C D., "Hyperspherical Formulation Of Impurity-Bound Excitons In Semiconductors" (1992). Faculty Bibliography. 2033.