Title

A Non-Quasi-Static Small-Signal Model for Metal-Semiconductor Junction Diodes

Keywords

Schottky-barrier diode; Transistors; Capacitance; transport; contacts; layers; IV; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from Al-Si diodes than that of the quasi-static model, particularly when the frequency of the excitation is high.

Publication Title

Solid-State Electronics

Volume

33

Issue/Number

12

Publication Date

1-1-1990

Document Type

Article

Language

English

First Page

1629

Last Page

1632

WOS Identifier

WOS:A1990EP15200015

ISSN

0038-1101

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