A Non-Quasi-Static Small-Signal Model for Metal-Semiconductor Junction Diodes
Schottky-barrier diode; Transistors; Capacitance; transport; contacts; layers; IV; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from Al-Si diodes than that of the quasi-static model, particularly when the frequency of the excitation is high.
Liou, J. J.; Lee, K.; Knapp, S. M.; Sundaram, K. B.; Yuan, J. S.; Malocha, D. C.; and Belkerdid, M., "A Non-Quasi-Static Small-Signal Model for Metal-Semiconductor Junction Diodes" (1990). Faculty Bibliography. 2071.