Title

Study of AlGaAs/InGaAs pseudomorphic HEMT using a two-dimensional device simulator

Authors

J S. Yuan

Comments

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Keywords

Monte-Carlo; Transport; Modfets; Gaas; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

Abstract

The use of the two-dimensional device simulator MEDICI in conjunction with a heterojunction application module to examine the current-voltage, transconductance, and cutoff frequency of an AlGaAs/InGaAs pseudomorphic HEMT is presented. The physical characteristics such as energy band diagram and potential and current contours are given and explained. The HEMT operated in the region of avalanche breakdown is also evaluated.

Publication Title

Physica Status Solidi a-Applied Research

Volume

153

Issue/Number

2

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

559

Last Page

566

WOS Identifier

WOS:A1996UA55900031

ISSN

0031-8965

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