Study of AlGaAs/InGaAs pseudomorphic HEMT using a two-dimensional device simulator
Monte-Carlo; Transport; Modfets; Gaas; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter
The use of the two-dimensional device simulator MEDICI in conjunction with a heterojunction application module to examine the current-voltage, transconductance, and cutoff frequency of an AlGaAs/InGaAs pseudomorphic HEMT is presented. The physical characteristics such as energy band diagram and potential and current contours are given and explained. The HEMT operated in the region of avalanche breakdown is also evaluated.
Physica Status Solidi a-Applied Research
Yuan, J. (1996). Study of AlGaAs/InGaAs pseudomorphic HEMT using a two-dimensional device simulator. Physica Status Solidi a-Applied Research, 153(2). doi: 10.1002/pssa.2211530232