Title

Transient analysis of bipolar transistors including built-in field and recombination in quasi-neutral base

Authors

J S. Yuan
Y Gu

Comments

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Abstract

Transient analysis of bipolar transistors including built-in field and recombination in the base is derived. For the bipolar transistor switching from the saturation to cutoff, minority carriers in the neutral base are mainly removed through the collector terminal, especially for the BJT with large base grading. The charge partitioning between the emitter and collector is a strong function of the strength of aiding field and boundary conditions for switching.

Publication Title

Physica Status Solidi a-Applied Research

Volume

153

Issue/Number

1

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

287

Last Page

297

WOS Identifier

WOS:A1996TV20200029

ISSN

0031-8965

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