An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the steady-state and transient characteristics of such a device. The model is derived rigorously from the ambipolar transport equaion and is valid for all free-carrier injection conditions, rather than just for a special case (i.e. low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional simulator called MEDICI are also included in support of the model. Copyright (C) 1996 Elsevier Science Ltd
Yue, Y., Liou, J. J. (1996). An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions. Solid-State Electronics, 39(9). doi: 10.1016/0038-1101(96)00046-9
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