Title

An analytical insulated-gate bipolar transistor (IGBT) model for steady-state and transient applications under all free-carrier injection conditions

Comments

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Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the steady-state and transient characteristics of such a device. The model is derived rigorously from the ambipolar transport equaion and is valid for all free-carrier injection conditions, rather than just for a special case (i.e. low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional simulator called MEDICI are also included in support of the model. Copyright (C) 1996 Elsevier Science Ltd

Publication Title

Solid-State Electronics

Volume

39

Issue/Number

9

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

1277

Last Page

1282

WOS Identifier

WOS:A1996VE35400003

ISSN

0038-1101

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