Title

Characterization Of Reverse Recovery Transient Behavior Of Bipolar-Transistors For Emitter Parameters Determination

Comments

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Abbreviated Journal Title

Can. J. Phys.

Keywords

Engineering; Electrical & Electronic; Physics; Applied; Physics; Condensed Matter

Abstract

Reverse recovery transient behavior of bipolar transistors is studied and a method of simulating such response is developed, which provides a new tool for determining the emitter parameters such as the emitter minority-carrier lifetime and the emitter surface recombination velocity. Bandgap narrowing, Fermi statistics and field-dependent minority-carrier mobility for accounting heavy doping effects in the emitter region are included in the treatment. Good agreement is obtained when emitter minority-carrier lifetimes for three different diodes calculated from the present method are compared with that obtained from other methods.

Journal Title

Canadian Journal of Physics

Volume

31

Issue/Number

11

Publication Date

1-1-1988

Document Type

Article

Language

English

First Page

1595

Last Page

1601

WOS Identifier

WOS:A1988R165900006

ISSN

0038-1101

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