Title

Double-Drift Avalanche Photodetectors

Authors

Authors

B. C. Deloach;J. N. Hollenhorst

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Engineering, Electrical & Electronic; Physics, Applied

Abstract

A new avalanche photodiode device is proposed that has superior noise and bandwidth performance, This structure in; corporates a drift region on both sides of the high field avalanche region. With the proper design, this reduces the capacitance by nearly a factor of two, without degrading the transit-time limited speed,In fact, it is shown that the double-drift structure can actually improve the intrinsic device speed, It is also shown that for high speed devices in which the layers must be kept thin, it can be advantageous to absorb light on both sides of the avalanche region, in spite of the consequent increase in the excess noise factor.

Journal Title

Ieee Transactions on Electron Devices

Volume

41

Issue/Number

12

Publication Date

1-1-1994

Document Type

Article

Language

English

First Page

2301

Last Page

2304

WOS Identifier

WOS:A1994PW50100011

ISSN

0018-9383

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