A Seminumerical Model For Multi-Emitter Finger Algaas/Gaas Hbts
Abbreviated Journal Title
HETEROJUNCTION BIPOLAR-TRANSISTORS; TEMPERATURE; DESIGN; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented. The model consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations. Experimentally observed thermally-limited I-V characteristics like the negative conductance and current crush phenomenon are accurately described by the model.
"A Seminumerical Model For Multi-Emitter Finger Algaas/Gaas Hbts" (1994). Faculty Bibliography 1990s. 1078.