Title
Studies On Deposition Parameters Of Silicon-Nitride Films Prepared By A Silane Nitrogen Plasma-Enhanced-Chemical-Vapor-Deposition Process Nitride Films Prepared By A Silane-Nitrogen
Abbreviated Journal Title
J. Mater. Sci.-Mater. Electron.
Keywords
LOW HYDROGEN; CVD; DIOXIDE; AMMONIA; PECVD; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Applied; Physics, Condensed Matter
Abstract
Silicon-nitride films were deposited by a plasma-enhanced-chemical-vapour-deposition (PECVD) technique using silane-nitrogen as the reactant-gas sources. The influence of the process parameters (such as the flow ratio of the reactant gases, the pressure, the substrate temperature, the radio frequency (r.f.) power, the time of deposition and the electrode spacing) on the deposition and etch rates were investigated and the experimental results are presented in detail.
Journal Title
Journal of Materials Science-Materials in Electronics
Volume
5
Issue/Number
5
Publication Date
1-1-1994
Document Type
Article
DOI Link
Language
English
First Page
255
Last Page
259
WOS Identifier
ISSN
0957-4522
Recommended Citation
"Studies On Deposition Parameters Of Silicon-Nitride Films Prepared By A Silane Nitrogen Plasma-Enhanced-Chemical-Vapor-Deposition Process Nitride Films Prepared By A Silane-Nitrogen" (1994). Faculty Bibliography 1990s. 1097.
https://stars.library.ucf.edu/facultybib1990/1097
Comments
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