A Model-Based Comparison Of The Performance Of Algaas/Gaas And Si/Sige Heterojunction Bipolar-Transistors (Hbts) Including Thermal Effects
Abbreviated Journal Title
Jpn. J. Appl. Phys. Part 2 - Lett.
DEVICE MODELING; HETEROJUNCTION BIPOLAR TRANSISTOR; SIMULATION; Physics, Applied
The performances of AlGaAs/GaAs and Si/SiGe heterojunction bipolar transistors (HBTs) at room temperature are compared based on an analytical model which includes relevant physics such as the high-current and thermal (or self-heating) effects. Three figures of merit of the HBTs are calculated and compared: the dc current gain, cutoff frequency, and maximum oscillation frequency. Our results indicate that the AlGaAs/GaAs HBT possesses less uniform but higher peak current gain, cutoff frequency, and maximum oscillation frequency than its Si/SiGe counterpart. Furthermore, at high current densities, it has been shown that the thermal effect becomes important and degrades the performance of AlGaAs/GaAs HBT more significantly than that of Si/SiGe HBT due primarily to the poorer GaAs thermal conductivity than Si.
Japanese Journal of Applied Physics Part 2-Letters
"A Model-Based Comparison Of The Performance Of Algaas/Gaas And Si/Sige Heterojunction Bipolar-Transistors (Hbts) Including Thermal Effects" (1994). Faculty Bibliography 1990s. 1106.