Title

Current Voltage Characteristics Of Submicrom Gaas-Mesfets With Nonuniform Channel Doping Profiles

Authors

Authors

K. M. Shih; D. P. Klemer;J. J. Liou

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

Field; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). The present model improves an existing model by allowing the possibility that the electric field near the source region can exceed a critical field, which is likely in an advanced submicrom MESFET operated in the quasi-saturation or saturation region. Furthermore, a realistic and nonuniform channel doping profile was considered in our calculations. Experimental data measured from a low-noise, ion-implanted MESFET are included in support of the model. The effects of different doping profiles and velocity profiles in the channel on the MESFET current-voltage characteristics were also investigated.

Journal Title

Solid-State Electronics

Volume

35

Issue/Number

11

Publication Date

1-1-1992

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/0038-1101(92)90191-e

Language

English

First Page

1639

Last Page

1644

WOS Identifier

WOS:A1992JT08100011

ISSN

0038-1101

Recommended Citation

"Current Voltage Characteristics Of Submicrom Gaas-Mesfets With Nonuniform Channel Doping Profiles" (1992). Faculty Bibliography 1990s. 1401.
https://stars.library.ucf.edu/facultybib1990/1401