Current Voltage Characteristics Of Submicrom Gaas-Mesfets With Nonuniform Channel Doping Profiles
Abbreviated Journal Title
Field; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). The present model improves an existing model by allowing the possibility that the electric field near the source region can exceed a critical field, which is likely in an advanced submicrom MESFET operated in the quasi-saturation or saturation region. Furthermore, a realistic and nonuniform channel doping profile was considered in our calculations. Experimental data measured from a low-noise, ion-implanted MESFET are included in support of the model. The effects of different doping profiles and velocity profiles in the channel on the MESFET current-voltage characteristics were also investigated.
"Current Voltage Characteristics Of Submicrom Gaas-Mesfets With Nonuniform Channel Doping Profiles" (1992). Faculty Bibliography 1990s. 1401.