Thermal And Reverse Base Current Effects On Heterojunction Bipolar-Transistors And Circuits
Abbreviated Journal Title
IEEE Trans. Electron Devices
HBT; Engineering, Electrical & Electronic; Physics, Applied
An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the collector-emitter offset voltage. It is shown that self-heating has implications for the cutoff frequency of the HBT, for the frequency response of a small-signal amplifier, and also for the thermal stability of a current mirror circuit.
Ieee Transactions on Electron Devices
"Thermal And Reverse Base Current Effects On Heterojunction Bipolar-Transistors And Circuits" (1995). Faculty Bibliography 1990s. 1515.