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Abbreviated Journal Title

J. Appl. Phys.

Keywords

Interdiffusion; Diffusion; Impurity; Superlattices; Shapes; Ga; Physics; Applied

Abstract

A technique of impurity-free vacancy-induced disordering of GaAs/AlGaAs multiquantum wells (MQW) that is area selective, very reliable, and highly reproducible, has been developed. The localized compositional disordering is induced by rapid thermal annealing of the sample after it has been coated with a thin film of ''spin-on'' glass and prebaked at 400 degrees C in a high purity nitrogen:oxygen (78:22) atmosphere. In order to self-consistently determine the diffusion coefficient of the Al and Ga atoms, the photoluminescence peak is fitted to the n=1 electron to heavy hole transition that corresponds to an error function potential profile caused by the diffusion. The process has been used to integrate two optical devices on a MQW structure. One is a nonlinear directional coupler all-optical switch, and the other is an integrated Mach-Zehnder all-optical modulator. The switching characteristics of the devices were measured using the conventional pump-probe measurement technique.

Journal Title

Journal of Applied Physics

Volume

80

Issue/Number

6

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

3179

Last Page

3183

WOS Identifier

WOS:A1996VG68100007

ISSN

0021-8979

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