Modeling The Post-Burn-In Abnormal Base Current In Algaas/Gaas Heterojunction Bipolar Transistors
Abbreviated Journal Title
J. Appl. Phys.
RECOMBINATION; Physics, Applied
The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range, We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model. (C) 1996 American Institute of Physics.
Journal of Applied Physics
"Modeling The Post-Burn-In Abnormal Base Current In Algaas/Gaas Heterojunction Bipolar Transistors" (1996). Faculty Bibliography 1990s. 1754.