Title

Modeling The Post-Burn-In Abnormal Base Current In Algaas/Gaas Heterojunction Bipolar Transistors

Authors

Authors

S. Sheu; J. J. Liou; C. I. Huang;D. C. Williamson

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

RECOMBINATION; Physics, Applied

Abstract

The base current of AlGaAs/GaAs heterojunction bipolar transistor subjected to a long burn-in test often exhibits an abnormal characteristic with an ideality factor of about 3, rather than a normal ideality factor between 1 and 2, in the midvoltage range, We develope an analytical model to investigate the physical mechanisms underlying such a characteristic. Consistent with the finding of an experimental work reported recently, our model calculations show that the recombination current in the base has an ideality factor of about 3 in the midvoltage range and that such a current is responsible for the observed abnormal base current in heterojunction bipolar transistor after a long burn-in test. Post-burn-in data measured from two different heterojunction bipolar transistors are also included in support of the model. (C) 1996 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

79

Issue/Number

9

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

7348

Last Page

7352

WOS Identifier

WOS:A1996UJ08400099

ISSN

0021-8979

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