Title

Effects of high-level free-carrier injection on the base transit time of bipolar junction transistors

Authors

Authors

Y. Yue; J. J. Liou; A. OrtizConde;F. G. Sanchez

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

This paper presents a detailed study on the effects of high-level free-carrier injection on the base transit time of bipolar junction transistors (BJTs). The results are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the quasi-neutral base (QNB). It is shown that high-level injection can create a large retarding field in the QNB which is in the opposite direction of the built-in field associated with the nonuniform doping concentration, thus increasing the base transit time. Our results further suggest that the widely used zero majority-carrier current approximation gives rise to a larger error compared to other lesser known approximations.

Journal Title

Solid-State Electronics

Volume

39

Issue/Number

1

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

27

Last Page

31

WOS Identifier

WOS:000073841100011

ISSN

0038-1101

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