A comprehensive study of high-level free-carrier injection in bipolar junction transistors
Abbreviated Journal Title
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.
semiconductor device modeling; bipolar junction transistors; high-level; injection; TIME MODEL; REGIONS; Physics, Applied
This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. It is shown that high-level injection can create a large retarding field which is in the opposite direction of the built-in field associated with the nonuniform doping concentration. High-level injection also enhances recombination in the QNB, thus resulting in a position-dependent minority-carrier current in the region even if the base is thin. Our results further suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
"A comprehensive study of high-level free-carrier injection in bipolar junction transistors" (1996). Faculty Bibliography 1990s. 1811.