Title
A procedure for the extraction of the bulk-charge effect parameter in MOSFET models
Abbreviated Journal Title
Solid-State Electron.
Keywords
Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Abstract
A technique is proposed to extract the bulk-charge effect parameter from the triode region of operation of the MOSFET characteristics. The method involves making two measurements of drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested on synthetic I-d-V-gs, characteristics modeled with SPICE and simulated by a 2D device simulator. It was also applied to measured I-d-V-gs characteristics of real devices. Both constant and normal field dependent mobilities were considered for comparison. Very good agreement is obtained between the parameters used in modeling and simulation and the extracted values. (C) 1999 Elsevier Science Ltd. All rights reserved.
Journal Title
Solid-State Electronics
Volume
43
Issue/Number
7
Publication Date
1-1-1999
Document Type
Article
Language
English
First Page
1295
Last Page
1298
WOS Identifier
ISSN
0038-1101
Recommended Citation
"A procedure for the extraction of the bulk-charge effect parameter in MOSFET models" (1999). Faculty Bibliography 1990s. 2827.
https://stars.library.ucf.edu/facultybib1990/2827
Comments
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