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Abbreviated Journal Title

J. Appl. Phys.

Keywords

Surface Recombination; Physics; Applied

Abstract

Base and collector leakage currents are extremely important to AlGaAs/GaAs heterojunction bipolar transistor (HBT) dc characteristics, and a simple model to describe such currents is presented. This study suggests that these currents are originated from the electron and hole leakage through the dielectric-layer (e.g., polyimide, nitride, etc.) interface at the emitter-base and base-collector peripheries, as well as through the n+-subcollector/semi-insulating substrate interface. Five HBTs having similar intrinsic make-ups (i.e., doping concentration and layer thickness) but different extrinsic make-ups (i.e., finger pattern, perimeter, dielectric layer, etc.) are investigated, and with the aid of the model, the possible mechanisms contributing to their leakage behavior identified.

Journal Title

Journal of Applied Physics

Volume

76

Issue/Number

5

Publication Date

1-1-1994

Document Type

Article

Language

English

First Page

3187

Last Page

3193

WOS Identifier

WOS:A1994PD44000091

ISSN

0021-8979

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