Title

Bias, Frequency, And Area Dependencies Of High Frequency Noise In Algaas/Gaas Hbt'S

Authors

Authors

J. J. Liou; T. J. Jenkins; L. L. Liou; R. Neidhard; D. W. Barlage; R. Fitch; J. P. Barrette; M. Mack; C. A. Bozada; R. H. Y. Lee; R. W. Dettmer;J. S. Sewell

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; RESISTANCE; MODEL; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The noise figure of the heterojunction bipolar transistor (HBT) in the microwave frequency range is studied, and an improved physical noise model is developed, Unlike the conventional high frequency noise model, which considers only the bias current dependence, the present model includes both the effects of voltage and current on the noise behavior, In addition, the frequency- and area-dependent natures of the HBT noise at very high frequencies are incorporated in the model. It is found that the voltage dependence of the high frequency noise in the HBT results from the self-heating effect which gives rise to a higher HBT lattice temperature than the ambient temperature. Also, the free-carrier transport delay time must be considered to properly model the frequency dependence of noise since the inverse of this time is comparable with the frequency, Furthermore, the area dependence of noise is dominated bg changes in the base resistance and emitter-base junction capacitance Results for the minimum noise factor calculated from the model compare favorably with those obtained ii-om measurements.

Journal Title

Ieee Transactions on Electron Devices

Volume

43

Issue/Number

1

Publication Date

1-1-1996

Document Type

Article

Language

English

First Page

116

Last Page

122

WOS Identifier

WOS:A1996TN38600017

ISSN

0018-9383

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