Title

Wet And Dry Etching Of Ligao2 And Lialo2

Authors

Authors

J. W. Lee; S. J. Pearton; C. R. Abernathy; J. M. Zavada;B. L. H. Chai

Comments

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Abbreviated Journal Title

J. Electrochem. Soc.

Keywords

MOLECULAR-BEAM EPITAXY; BUFFER LAYER; GAN; GROWTH; SAPPHIRE; SUBSTRATE; Electrochemistry; Materials Science, Coatings & Films

Abstract

LiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in some acid solutions, including HF, at rates between 150 and 40,000 Angstrom/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl-2/Ar or CH4/H-2/Ar under electron cyclotron resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metallorganic/hydride counterparts.

Journal Title

Journal of the Electrochemical Society

Volume

143

Issue/Number

8

Publication Date

1-1-1996

Document Type

Letter

Language

English

First Page

L169

Last Page

L171

WOS Identifier

WOS:A1996VC70600004

ISSN

0013-4651

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