Modeling The Current-Dependent Ft For Algaas/Gaas Heterojunction Bipolar-Transistor Design
Abbreviated Journal Title
LAYER; FREQUENCY; TIME; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
The modeling of current-dependent cut-off frequency f(T) for AlGaAs/GaAs heterojunction bipolar transistors has been investigated. The analytical equations developed account for high-current base widening, current-dependent collector-base junction capacitance, and proton and nonproton implanted collectors. The ballistic transport and velocity overshoot effects are accounted for in the modeling equations. Experimental results reported in the literature are compared in support of the model utility and accuracy. Optimization of heterojunction bipolar transistor design is discussed based on current-dependent f(T) analysis.
"Modeling The Current-Dependent Ft For Algaas/Gaas Heterojunction Bipolar-Transistor Design" (1991). Faculty Bibliography 1990s. 380.