Abbreviated Journal Title
Phys. Rev. B
Keywords
Two-Dimensional System; Strong Magnetic-Fields; Electron Localization; Resistance; Scattering; Physics; Condensed Matter
Abstract
Deviations from perfect quantization of the Hall resistivity rho(yx) at integer filling factors have recently been observed in Si metal-oxide-semiconductor field-effect transistors. We demonstrate how scattering between degenerate states at the edges in a quantum Hall system can lead to size-dependent deviations in rho(yx) from its quantized values. While the Hall resistivity fluctuates, the current flows without dissipation along the channel due to the absence of backscattering.
Journal Title
Physical Review B
Volume
46
Issue/Number
3
Publication Date
1-1-1992
Document Type
Note
Language
English
First Page
1901
Last Page
1904
WOS Identifier
ISSN
0163-1829
Recommended Citation
Heinonen, O., "Deviations From Perfect Integer Quantum Hall-Effect" (1992). Faculty Bibliography 1990s. 473.
https://stars.library.ucf.edu/facultybib1990/473
Comments
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