Current Voltage Characteristics Of Bipolar-Transistors Including Quasi-Saturation, Finite Collector Lifetime, And High-Low Junction Effects
Abbreviated Journal Title
Int. J. Electron.
Model; Engineering, Electrical & Electronic
A physics-based and compact model is developed to predict the bipolar transistor DC characteristics covering all saturation, quasi-saturation, and active operations. The present model differs from the existing models in that the present model employs a regional approach rather than the charge-control approach used previously and that the present model requires only the physical parameters, such as device make-up, whereas the previous models often require parameters extracted from measurements. Device physics relevant to the base-collector junction, like current-induced base widening and conductivity modulation and electron-hole recombination in the quasi-neutral collector layer, are accounted for in the analysis. We show that the current voltage characteristics predicted by the present model compare favourably with that obtained from measurements and simulations reported in the literature.
International Journal of Electronics
"Current Voltage Characteristics Of Bipolar-Transistors Including Quasi-Saturation, Finite Collector Lifetime, And High-Low Junction Effects" (1992). Faculty Bibliography 1990s. 511.