Modeling Si/Si1-Xgex Heterojunction Bipolar-Transistors
Abbreviated Journal Title
Current Gain; Hbts; Si1-Xgex; Circuits; Silicon; Delay; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter
Modeling Si/Si1-xGex/Si heterojunction bipolar transistors (HBTs) has been examined. The model equations account for valence- and conduction-band discontinuities, heavy doping effects and high collector current effects. Bias-dependent emitter resistance and heterojunction capacitances are also included. Comparison between the model prediction and the experimental data is used to demonstrate the model utility and accuracy. Good agreement between the model prediction and measurement has been obtained. The model is useful for predicting the gate delay of emitter-coupled logic at different temperatures.
"Modeling Si/Si1-Xgex Heterojunction Bipolar-Transistors" (1992). Faculty Bibliography 1990s. 615.