Collector Base Junction Capacitance Of Advanced Bipolar-Transistors Operating At Avalanche Breakdown
Abbreviated Journal Title
Phys. Status Solidi A-Appl. Res.
Multiplication; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter
Modeling of the collector-base junction capacitance of the advanced bipolar transistors operating at avalanche breakdown is developed. The comprehensive junction capacitance model accounts for high current and high field effects at the collector-base junction. The impact ionization generates tremendous amount of free carriers in the collector-base space-charge region which increases the collector-base junction capacitance at the avalanche breakdown regime. The present collector-base junction capacitance is useful for device and circuit design under avalanche breakdown prior to the actual fabrication of the circuit.
Physica Status Solidi a-Applied Research
"Collector Base Junction Capacitance Of Advanced Bipolar-Transistors Operating At Avalanche Breakdown" (1992). Faculty Bibliography 1990s. 616.