Title

Collector Base Junction Capacitance Of Advanced Bipolar-Transistors Operating At Avalanche Breakdown

Authors

Authors

J. S. Yuan

Comments

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Abbreviated Journal Title

Phys. Status Solidi A-Appl. Res.

Keywords

Multiplication; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

Abstract

Modeling of the collector-base junction capacitance of the advanced bipolar transistors operating at avalanche breakdown is developed. The comprehensive junction capacitance model accounts for high current and high field effects at the collector-base junction. The impact ionization generates tremendous amount of free carriers in the collector-base space-charge region which increases the collector-base junction capacitance at the avalanche breakdown regime. The present collector-base junction capacitance is useful for device and circuit design under avalanche breakdown prior to the actual fabrication of the circuit.

Journal Title

Physica Status Solidi a-Applied Research

Volume

134

Issue/Number

2

Publication Date

1-1-1992

Document Type

Article

DOI Link

http://dx.doi.org/10.1002/pssa.2211340227

Language

English

First Page

575

Last Page

581

WOS Identifier

WOS:A1992KH81600026

ISSN

0031-8965

Recommended Citation

"Collector Base Junction Capacitance Of Advanced Bipolar-Transistors Operating At Avalanche Breakdown" (1992). Faculty Bibliography 1990s. 616.
https://stars.library.ucf.edu/facultybib1990/616