All-Optical Switching In A Nonlinear Gaalas X-Junction
Abbreviated Journal Title
We demonstrate femtosecond all-optical switching in both symmetric and asymmetric nonlinear X junctions, fabricated in AlGaAs channel waveguides at 1555 nm with photon energies below one half the semiconductor band gap. The switching is a consequence of optically induced symmetry breaking within the junction.
"All-Optical Switching In A Nonlinear Gaalas X-Junction" (1993). Faculty Bibliography 1990s. 622.